Energetics of Interfaces and Strain Partition in GaN/AlN Pseudomorphic Superlattices
نویسندگان
چکیده
We present the results of a twofold experimental and computational study (0001) GaN/AlN multilayers forming pseudomorphic superlattices. High-Resolution Transmission Electron Microscopy (HRTEM) shows that heterostructures with four c-lattice parameters thick GaN Quantum Wells (QW) are misfit-dislocation free. Accurate structural data extracted from HRTEM images via new methodology optimizing residual elastic energy stored in samples. Total calculations performed several models analogous to QWs increasing thicknesses GaN, whereas this AlN barrier is kept fixed at n = 8 parameters. With vanishing external stresses, minimum configurations studied systems correspond different strain states. Linear elasticity accurately yields corresponding lattice parameters, suppressing need for on-purpose total calculations. Theoretically justified parabolic fits excess interfacial yield values stress stiffness as functions QW thickness. species-projected densities states gap there allow deciphering effect evolving on electronic structure superlattice. It found decreases linearly QW. These briefly discussed light shed by previous works literature.
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ژورنال
عنوان ژورنال: Crystals
سال: 2023
ISSN: ['2073-4352']
DOI: https://doi.org/10.3390/cryst13081272